The angular variation of elastically scattered electrons excited by X-rays from various electron levels of silicon and surface or near surface impurity atoms of nickel and gold are reported. The valence band profile of the Si (111) surface is presented as a function of electron take-off angle. Evidence is presented that the Si(2p) binding energy is dependent on the crystal surface geometrical ordering. A discussion of some of the implications of these studies is presented.
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Ν. E. Erickson (1977) studied this question.
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