Growth and characterization of nanocrystalline CdSe thin films deposited by the successive ionic layer adsorption and reaction method

The successive ionic layer adsorption and reaction method was used to deposit CdSe thin films on glass substrates at room temperature (300 K). The films were characterized by x-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, atomic force microscopy and high-resolution transmission electron microscopy. Optical absorption and electrical resistivity were measured. The CdSe layer grew with nanocrystalline cubic phase along with some amorphous phase present in CdSe film, with an optical band gap ' E g ' of 2.1 eV and room temperature electrical resistivity of the order of 10 6 Ω cm.