Amorphous Semiconductor‐Electrolyte Junction. A New Interpretation of the Impedance Data of Amorphous Semiconducting Films on Metals

On the basis of the theory of amorphous semiconductor Schottky barrier an equivalent electrical circuit of the amorphous oxide film/electrolyte interface is proposed.—The analytical expressions for the equivalent conductance and capacitance of the barrier are reported in the hypothesis of a constant density of states within the mobility gap.—According to this model, the semiconducting properties and the impedance behaviour at different frequencies of anodic oxide films on Niobium are interpreted by taking into account the amorphous nature of the films.—An explanation for the anomalous behaviour of the Mott‐Schottky plots usually observed with amorphous anodic oxide films is presented.—The possible extension of such a model to different metal/anodic oxide/electrolyte junctions is suggested.