We calculate the electron capture rates for GaAs-Al x Ga 1-x As multiple quantum wells by the emission of confined phonons via electron-phonon (Frohlich) interaction. The carrier capture process as detected by optical measurements is discussed and we show the importance of a knowledge of the details of carrier excitation in order to obtain an appropriate interpretation of the experimental results. In particular we show that if the carriers are excited into a confined state with a large kinetic energy intrasubband transitions strongly influence the capture rates. We obtain remarkable agreement with several experimental results.
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Paula et al. (1994) studied this question.