Strained GaInAsP single-quantum-well lasers grown with tertiarybutylarsine and tertiarybutylphosphine

We report on low threshold current densities in GaInAsP single-quantum-well (SQW) lasers grown with the metalorganic column-V precursors, tertiarybutylarsine and tertiarybutylphosphine, instead of the conventional compressed gas sources, arsine and phosphine. Threshold current densities of 121 A/cm2 for a 1.6% compressive strained SQW laser and 249 A/cm2 for an unstrained SQW laser have been measured and are among the lowest values seen in this material system.