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Post-treatment of replacement metal gate is investigated for the device performance improvement of high-klast p-type bulk FinFET using post-deposition annealing (PDA) andSF₆plasma treatment. Compared with untreatedHfO₂reference, post-high-kdeposition PDA andSF₆plasma-treated devices show improved driving current and hole mobility. With the carrier number fluctuations with correlated mobility fluctuation model,~ 3~ timeslower input gate referred noise is observed in PDA andSF₆plasma-treated devices compared with untreated FinFETs. Post-treatments suppress the trap density of high-klast FinFET. PDA reduces oxide bulk trap whereasSF₆plasma affects both interface and oxide bulk trap.
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Lee et al. (2013) studied this question.
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