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The existence of surface states in anthracene crystals can be deduced from the thresh-old energies for photoemission of electrons or holes from various metals into anthracene. These surface states are capable of trapping electrons as well as holes; their density is about 2 ×{} 10¹³ cm^-2 eV^-1; their maximum depth is 1.3 ±{} 0.2 eV. They probably can act as recombination centers for charge carriers.
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Baessler et al. (1968) studied this question.
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