The Hall effect for holes has been measured in high-purity single crystals of anthracene. The magnetic field was directed along each of the a, b, and c^' crystallographic directions, and the electric field was in each of the two directions orthogonal to the magnetic field. The Hall mobilities μH were computed from the measurements and the drift mobilities μD were measured in the same crystals. The ratios μHμD are BₐIb, -4.3; BₐI_c^', -4.8; BbIₐ, +7.6; BbI_c^', +8.8; B_c^'Iₐ, -1.5; and B_c^'Ib, -1.5. These results are consistent with a band model for charge-carrier transport.
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Korn et al. (1969) studied this question.
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