Interpretation of one-carrier thermally stimulated currents and isothermal decay currents. II. Application to the evaluation of trap parameters in anthracene

The concepts of one-carrier thermally stimulated currents (TSC) and isothermal decay currents (IDC) are used to interprete experimental results obtained for single crystals of anthracene provided with either electron-injecting or hole-injecting contacts. Four hole traps (around ca. 0.4, 0.5, 0.6, and 0.85 eV) and two electron traps (ca. 0.5 and 0.8 eV) are identified and their frequency factors estimated. It is found that hole and electron traps in anthracene are distributed in energy and spatially non-uniformly filled with carriers.