A simple mathematical interpretation of the principle of corresponding states is determined which is applicable to dispersions of loss tangent and permittivity for all well known distributions of relaxation times. The relationships obtained provide a useful technique for analysing incomplete dielectric data. This technique is demonstrated for results already published on thin films of silicon oxide. A brief review is given on present methods of analysing dielectric data with particular reference to the relevant graphical plots.
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A.R. Morley (1969) studied this question.
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