Si oxidized sequentially using and isotopic tracers was studied in detail to investigate the oxidation mechanisms for dry oxidation. Analyses of these samples with SIMS provided detail profiles of the 16 O and 18 O concentration in the oxide. At 1 atm and 1000°C, we found 18 O reacted both at the surface of the oxide as well as at the interface. A subsequent anneal of the 18 O oxides revealed that 18 O in both regions of the was incorporated in the lattice. Both 18 O peaks at the surface and at the interface grew with oxidation time. The same 18 O peaks also increased in growth rate with lower initial oxidation time. The growth rates for both peaks increased at higher temperatures. Profiles of the 18 O in the oxide revealed a solubility limit for the diffusing oxidant in the oxide at . The same profiles also showed very little oxygen diffusion in the network of the oxide .
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Han et al. (1988) studied this question.