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September 15, 1992Physical review. B, Condensed matter

Sb/InP(100) interface: A precursor to surfactant-mediated Ge epitaxy

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Authors

DRD. RiouxUniversity of Wisconsin–OshkoshHHHartmut HöchstUniversity of Wisconsin–Madison

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Rioux et al. (1992) studied this question.

synapsesocial.com/papers/6a933948dd2c16e4def8e803https://doi.org/10.1103/physrevb.46.6857
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Metal contacts on semiconductors: The adsorption of Sb, Sn, and Ga on InP(110) cleaved surfaces1984 · 39 citations
  2. 2Symmetric arsenic dimers on the Si(100) surface1986 · 225 citations
  3. 3Influence of surfactants in Ge and Si epitaxy on Si(001)1990 · 347 citations