Thermal stability of molybdenum–silicon nitride–silicon Schottky diodes

Previously our group [Sobolewski et al., Appl. Phys. Lett. 54, 638 (1988)] had demonstrated metal–thin insulator-silicon Schottky diode structures which allow the Si Schottky barrier height to be adjusted over nearly the full range of the silicon band gap by an appropriate choice of insulator thickness and metal. However, previous attempts to achieve a structure with a high barrier height to a p type that is stable above 400 °C (using primarily titanium) have failed. In this paper we report on results for molybdenum, which has a stable tie line to SiO2 and Si3N4 in a metal–silicon–oxygen (nitrogen) ternary phase diagram which leads to a more stable system.