Most metal-semiconductor interface-formation studies investigate the chemisorption of metal adatoms on semiconductor substrates. We extended the investigation of the Si-Au interface to the chemisorption of Si atoms on Au. We found that the formation of an extended, alloyed interface region is a common feature of both interface-formation processes. Thus, the changes in the surface and bulk substrate thermodynamic parameters do not affect the qualitative morphology of the interface.
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Franciosi et al. (1985) studied this question.
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