A theory is developed for interband Raman scattering in a semiconductor in an external magnetic field. The process involves an interband electronic transition and an interband transition between Landau levels. Specific formulas are presented for the two-band model of a semiconductor, and numerical calculations are presented for PbTe. The scattering efficiency shows density-of-states peaks and a strong resonance when the scattered frequency equals the cyclotron frequency. The latter scattering should be experimentally observable.
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Wallis et al. (1970) studied this question.
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