Tris(2,4‐pentanedionato)scandium(III) as a Precursor for Plasma‐Assisted Liquid Injection CVD to Deposit Nanocrystalline Scandia Thin Films

Nanocrystalline cubic scandium oxide thin film deposition by plasma‐assisted (PA) liquid injection (LI) CVD is studied at 773 K in a N2/O2 plasma environment with a triglyme solution of tris(2,4‐pentanedionato)scandium(III) (Sc(acac)3) as the precursor. The vapor pressure of the precursor is measured by employing a horizontal, dual‐arm, single‐furnace, thermogravimetric analyzer as a transpiration apparatus. The standard enthalpy of sublimation (79 ± 1 kJ mol−1) of Sc(acac)3 was measured from the Clausius–Clapeyron plot [ln(pe/Pa)T versus 1/T]. A nanocrystalline film of Sc2O3 with the (222) plane as the dominant orientation is obtained on glass under a deposition pressure of 0.8–1.2 mbar.