Electronic transport properties of Cs-encapsulated single-walled carbon nanotubes created by plasma ion irradiation

The electronic transport properties of Cs-encapsulated single-walled carbon nanotubes (Cs@SWNTs), which are created by a plasma ion irradiation method, are experimentally investigated at both room and low temperatures by fabricating field-effect transistor devices with these modified SWNTs. It is found that Cs@SWNTs exhibit air stable n-type transport characteristics at room temperature, where Cs atoms function as an electron donor. Moreover, Coulomb oscillations are observed under a low temperature, which is derived from the electronic structure modulated mainly by the encapsulated Cs atoms.