Aluminium-free strained-quantum-well In0.2Ga0.8As lasers employing novel two-stepped InGaAsP confinement layers and InGaP cladding layers on a GaAs substrate are demonstrated for the first time. Threshold current density as low as 58 A/cm2 is obtained with broad stripe lasers. This threshold current density is, to the authors' knowledge, the lowest reported for 0.98 μm lasers grown by organic chemical vapour deposition.
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Chang-Hasnain et al. (1993) studied this question.