High-energy (0.2–0.8 MeV, ≊1017 cm−2) electron irradiation-stimulated solid phase regrowth of phosphorus-implanted silicon layers has been observed in the temperature range 350–600 °C. The influence of electron irradiation on the annealing of an isolated damage layer and of a continuous amorphous layer is compared. An ionization effect is found to enhance annealing of trapping centers in the isolated damage region. In addition, a small enhancement of solid phase epitaxial regrowth of the continuous amorphous layer was found, attributed to an elastic displacement effect.
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Miyao et al. (1986) studied this question.