To investigate the thermal diffusion of ion-implanted arsenic, arsenic and carrier profiles were measured by the Rutherford backscattering method and differential conductivity measurement, respectively. Only a fraction of the arsenic is electrically active, and the relation between the total arsenic concentration C T and the electrically active arsenic concentration C A is given by the empirical formula, C T = C A +7.0 × 10 -66 ·exp (1.05 eV/ k T )· C A . The effective arsenic diffusion coefficient was developed, taking into account the electrical activity of arsenic, and is expressed by D As =( n / n i ) {1+ C A ·∂[ln ( n / n i )/∂ C T }· D i , where n = n ( C T ) is the carrier concentration as a function of C T , and n i is the intrinsic carrier concentration. The calculated arsenic profiles and the sheet resistivity were in good agreement with the measured ones.
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Tsukamoto et al. (1980) studied this question.