Single crystalline epitaxial layers of CdSxSe1−x (0 < x < 1) were grown by gas transport of CdS and CdSe on slices of CdS. In this way graded gap crystal layers of up to 200 μm thickness were obtained. By means of an electron beam microprobe the concentration sulphide-selenide (x) as function of the position was determined. The luminescence of the layers was studied using electron beam excitation.
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Rüfer et al. (1972) studied this question.
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