Heteroepitaxy of CuInS2 on ZnSe by LPE Method from In Solution

Heteroepitaxy of CuInS2 has been carried out on ZnSe by the LPE method from an In solution. The optimum growth conditions were a maximum temperature T m of 700°C and a cooling rate CR of 0.5°C/min. LPE growth was not successful when T m was 500–650°C. The critical value of T m for successful LPE growth was near 700°C. The coefficient k LPE defined as the ratio of the optimum T m to the melting temperature of the solute, was than those for other chalcopyrite materials investigated previously. The optimum growth conditions are considered to be related to the energies of formation and melting temperatures of the substrate and solute, and the I2-VI, III2-VI3 and other compounds produced in the LPE system.