Occupied and unoccupied surface states on the single-domain Si(100):Sb-2×1 surface

Angle-resolved photoelectron spectroscopy and k-resolved inverse photoemission have been used to study the electronic structure of the Si(100):Sb-2×{}1 surface. For both techniques, one occupied and one unoccupied surface-state band has been mapped along the [010] and [011] directions. The surface shows semiconducting behavior with an estimated minimum band gap of 1.45 eV along the [010] direction.