The influence of high magnetic fields on the line shape of the exciton‐polariton reflectance is investigated in epitaxial GaAs at helium temperature. The changes of the line shape can be understood from the variation of the Bohr radius, the binding energy, and the oscillator strength of the exciton in a magnetic field. From the analysis of the spectra it is shown that the longitudinal‐transverse splitting of the ground state can be obtained from the experimental reflectance curves. In addition to the well‐known exciton free layers at the crystal surface, the influence of a transition layer, where the excitons get partially ionized, is established.
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Fischbach et al. (1974) studied this question.
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