New data on the decay of photocurrent following a 10 ns laser pulse are presented for the ideal one-dimensional semiconductor crystal PDATS. The first carrier trapping event is identified and clearly distinguished from subsequent dispersive trapping and trap release events. The trapping is of one-dimensional form. The characteristic trapping time is 500 ns. For a carrier velocity of 2.2*10 3 ms -1 the traps are 1.1 mm apart on a chain.
No takes yet. Share an insight, caveat, or question.
Donovan et al. (1985) studied this question.