Comparison of Defects Injected into Platinum by Quenching and by Radiation Doping

Specimens made from pure, well-annealed platinum, from quenched platinum, and from platinum that had been previously irradiated below 100^∘{}K and annealed to above room temperature were bombarded simultaneously below 7^∘{}K with 20-MeV deuterons. Damage production and recovery in the three types of specimens were compared in detail. Both of the preirradiation treatments increase the sink density for interstitials mobile in stage I. The initial defect production rate is increased by the presence of vacancy clusters and decreased by the presence of interstitial clusters.