Answers are grounded in this paper and cite their sources.
A method to increase decisively the p-type doping level in ZnSe-based laser diodes is described. Upon Li3N indiffusion, the formation of a stable acceptor complex is observed. Free hole concentrations of 8×1018 cm−3 are obtained. This value is at least one order of magnitude larger than typical p-type doping levels achieved by molecular-beam epitaxy of ZnSe. In addition, no compensation effects occur, as usually observed for p-type doping using either Li or N. ZnSe-based lasers processed by applying this post-growth p-doping enhancement technology show significantly improved properties.
No takes yet. Share an insight, caveat, or question.
Schulz et al. (2002) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: