ZnS Thin Films Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition

In this paper, the deposited properties of ZnS thin films prepared by the low-pressure metalorganic chemical vapor deposition (MOCVD) technique utilizing dimethyl-zinc (DMZn) and H2S as the source materials have been reported. The effects of the growth conditions on the growth rate of the films have been measured and the growth mechanism has been discussed. High-quality ZnS thin films with strong preferred orientation can be grown. The Δ2θ value of the zinc blende (111) plane diffraction peak can be reduced below 0.175°. The atomic ratio of S/Zn and lattice constant are 0.96 and 5.418 Å, respectively.