We have experimentally investigated the possibility of increased electron reflectivity induced by an insulating NiO layer that is used to exchange bias a metallic spin-valve. For this purpose Ni/sub 80/Fe/sub 20//Cu/Ni/sub 80/Fe/sub 20/ and Ni/sub 66/Fe/sub 16/Co/sub 18//Cu/Co/sub 90/Fe/sub 10/ spin-valves were grown and subsequently covered by insulating NiO or by metallic FeMn. In all cases the giant magnetoresistance of the NiO spin-valves is systematically larger upon a variation of the exchange-biased ferromagnetic layer thickness, also after correcting the data for the conductivity of FeMn which we have determined from a separately grown series of samples with variable FeMn thickness. The increased giant magnetoresistance ratios can be qualitatively understood on the basis of a semiclassical calculation in which (partial) specular reflectivity at the NiO interface has been included.
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Swagten et al. (1998) studied this question.
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