The growth of ZnSe and other wide-bandgap II-VI semiconductors by MOCVD

ZnSe was first grown by MOCVD some years ago. However, it is only in recent years that the material quality has improved sufficiently for potential devices to be evaluated. This paper discusses the growth by MOCVD of high-purity ZnSe epitaxial layers, wide-bandgap II-VI ternary alloys, multilayers and low-dimensional structures with potential for blue or blue-green light emission. The growth conditions for high-purity ZnSe layers (N D -N A <10 15 cm -3 ), the structure of such layers grown heteroepitaxially on to III-V semiconductor substrates, the influence of the precursors and the resulting luminescence are considered. Important factors such as the growth conditions required for the alloys and multilayers are also discussed, together with pertinent imposed material constraints. Finally, the major residual problems associated with MOCVD growth are identified and possible solutions presented.