Scattering mechanisms in inversion channels of MIS structures on silicon

Physical models which explain the mobility behaviour in inversion channels μH as a function of surface concentration Γ and temperature T are discussed. New data are given on the dependence of μH(Γp, T) in the region of small Γp and the surface conduction σs(Γp, T) on gate electrode potential for structures with a high density of surface traps. At small Γ the behaviour of μH(Γ) is described by a simple model of a transition layer. It is experimentally shown that in the absence of such a layer the mobility is constant at small Γ.