Activation energy analysis as a tool for extraction and investigation of p–n junction leakage current components

The origin of p–n junction reverse current is investigated by a method based on the analysis of the leakage current activation energy. Its main advantages lie in the possibility to distinguish multiple reverse-bias dependent leakage components and determine their mechanisms, which can be different than the Shockley–Read–Hall or field-enhanced generation mechanisms. This is illustrated for state-of-the-art silicided shallow junctions, exhibiting a local Schottky effect, due to small-area silicide penetrations. An estimate of the area of the Schottky (or Shannon) contacts follows from the analysis. The method may be used for various semiconductor materials and leakage current origins.