We report on a core-level photoemission study of lanthanide silicides epitaxially grown on n-type Si(111). In the monolayer regime, an extremely low band bending is observed for the first time, with a Fermi-level position only 0.08±0.05eV below the conduction-band minimum of silicon. With increasing coverage, the Fermi-level position moves towards a final Schottky-barrier height of 0.32±0.05eV. This behavior is assigned to the developing metallicity of the silicide overlayer.
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Vandrè et al. (1999) studied this question.
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