Ab initio studies of the SiC molecule using SCF-CI techniques have resulted in specifying the ground state as 3 Pii. A rotational transition is predicted at 109 GHz, while the fundamental vibration is expected at 10.2-micron wavelength. In addition, an electronic transition of the type 3 Sigma(-) - 3 Pii is predicted in the 1-3 micron region.
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Lutz et al. (1974) studied this question.