Erbium silicide thin films are grown on Si(100) substrates under high vacuum by single deposition of Er or co-deposition of Er and Si, followed by annealing. Electron microscopy revealed for both preparations the existence of at least three new types of structural phases of erbium silicide. One has a tetragonal ThSi2 type structure; the other two are orthorhombic superstructures of the first one resulting from ordering of vacancies on the Si sublattice, which leads to a composition of ErSi2−x (0 < x < 0.5).
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Frangis et al. (1996) studied this question.
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