Atomic structure at the LaSi2−x/Si(100) interface

Interfaces between Si(100) and LaSi2−x lattices formed by rapid thermal annealing at ∼900 °C for 10 s have been studied using high-resolution transmission electron microscopy. The experimental results show that the C axis of the LaSi2−x unit cell points to the 〈332〉Si direction. A model suggesting the {100} planes of LaSi2−x grown on a {113}Si surface has been put forward to account for the observed tilting growth of LaSi2−x disilicide on the Si(100) surface.