Radiation hardness of the electrical properties of carbon nanotube network field effect transistors under high-energy proton irradiation

The effect of high-energy proton irradiation on the physical properties of carbon nanotubes (CNTs) was investigated. The focus of the study was on the electrical properties of single-walled carbon nanotube (SWNT) network devices exposed to proton beams. Field-effect transistors (FETs) of network type were fabricated using SWNTs and were then irradiated by high-energy proton beams of 10-35 MeV with a fluence of 4 × 10(10)-4 × 10(12) cm(-2) that are comparable to the aerospace radiation environment. The electrical properties of both metallic and semiconducting CNT network FET devices underwent no significant change after the high-energy proton irradiation, indicating that the CNT network devices are very tolerant in proton beams. Raman spectra confirm the proton-radiation hardness of CNT network FET devices. The radiation hardness of CNT network FET devices promises therefore the potential usefulness of CNT-based electronics for future space application.