The results of a study of the influence of arsenic doping of silicon and and reactant concentrations on etch rate and etch profile are described. From approximately 10 16 to 10 20 As/cm 3 , the etch is anisotropic and the etch rate does not increase in either or plasmas. At concentrations above 10 20 As/cm 3 , mask undercutting occurs and the etch rate rapidly increases (approximately 300% for ), although the functional form of the relationship between etch rate and As concentration depends on the reactant, reactant supply, and silicon load. Temperature effects are also described.
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Schwartz et al. (1983) studied this question.