The authors report the growth of TiO2nanowires by heating the Ti/glass template and the fabrication of a TiO2nanowire metal-insulator-semiconductor (MIS) photodetector (PD). Compared with a TiO2nanowire metal-semiconductor- metal PD, it was found that we could achieve a photocurrent 29 times larger. It was also found that the dynamic response of the TiO2nanowire MIS PD was stable and reproducible with an on/off current contrast ratio of around 180. With an incident light wavelength of 390 nm and an applied bias of 5 V, it was found that the measured responsivity of the PD was 2.46 × 10-3A/W. Furthermore, the noise equivalent power and the detectivity of the fabricated TiO2nanowire MIS PD were 7.49 × 10-12W and 8.86 × 1011cm · Hz0.5· W-1, respectively.
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Chang et al. (2012) studied this question.
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