AlGaN ultraviolet (UV) metal-semiconductor-metal (MSM) photodetectors (PDs) grown on silicon substrates were fabricated and characterized. With 5-V applied bias, it was found that dark current density of Al0.2Ga0.7N PDs on silicon substrate was only 7.5times10-9A/cm2. With an applied bias of 7 V, it was found that peak responsivities were 0.09 and 0.11 A/W while UV/visible rejection ratios (i.e., peak wavelength: 420 nm) were 324 and 278 for Al0.2Ga0.8N and Al0.3Ga0.7N MSM PDs, respectively. Moreover, the noise equivalent power of Al0.2Ga0.8N MSM PDs was estimated to be 3.5times10-12W
No takes yet. Share an insight, caveat, or question.
Chiou et al. (2007) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: