The low-frequency generation recombination and the 1/f noise in AlGaN Schottky barrier photodetectors with high (40%) Al fraction has been investigated under forward and reverse bias conditions. The activation energy of local level contributing to noise was found to be Ea≈1 eV. Depending on the forward current level, the noise from Schottky barrier or from the series resistance (contacts and/or base) predominates. The upper bound of the Hooge parameter in Al0.4Ga0.6N was estimated as α⩽10.
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Rumyantsev et al. (2001) studied this question.
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