Near-field optical photoluminescence microscopy of high-density InAs/GaAs single quantum dots

We performed low-temperature near-field optical photoluminescence (PL) microscopy of a high-density (>100 μm−2) sample of single InAs/GaAs quantum dots (QDs) with very high spatial resolution. Six single QDs of different emission energies are spatially resolved with an apertured fiber probe of 200 nm diam by taking the complete PL spectrum at each point, while the scanning area is 250×250 nm2.