We report the fabrication and characterization of the solar-blind AlGaN avalanche photodiodes grown by metal-organic chemical vapor deposition on c-plane sapphire substrate. The fabricated devices with 100 μm diameter active area exhibit a peak responsivity of 79.8 mA/W at 270 nm and zero bias, corresponding to an external quantum efficiency of 37%. Multiplication gains as high as more than 2500 were obtained in these devices.
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Sun et al. (2010) studied this question.
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