Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD

We report high-performance GaN ultraviolet (UV) p-i-n avalanche photodiodes (APDs) fabricated on bulk GaN substrates. The fabricated GaN p-i-n diodes demonstrated optical gains>10⁴and low dark current densities operating at wavelengths from 280 to 360 nm. The result is among the highest III–N-based APD gains at the deep UV wavelength of 280 nm reported to date.