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In this study, we report a simple optical reflectance method to characterize the Al mole fraction in bulk AlGaN and AlGaN/GaN heterostructures. This method is based on the concept of Fabry–Perot oscillations of a probing beam when the photon energy of the beam falls below the band-gap energy of the semiconductor. The accuracy and merits of this method in comparison with the more elaborate photoluminescence method are discussed.
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Yu et al. (1999) studied this question.
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