Photoelectric conversion behavior based on direct interfacial charge-transfer from porphyrin derivative to silicon nanowires

A porphyrin derivative was prepared, and the photoelectric conversion behaviors of porphyrin derivative sensitized silicon nanowires had been studied that showed the maximum photocurrent generation that occurred at the near infrared region, which can be attributed to the direct interfacial charge-transfer from the highest occupied molecular orbital of porphyrin derivative to the conduction band of silicon nanowires. These properties open up the possibility of constructing photovoltaic devices and light-harvesting systems using various dyes and semiconductors.