High-mobility GaN-on-sapphire p-n diodes with near-unity ideality factor and large breakdown voltage

In this work, GaN-based p-n diodes with thick drift layers grown by metal organic vapor phase epitaxy (MOVPE) on sapphire were investigated. We discuss their characteristics and develop a simulation model to fit the experimental data. The fabricated diodes feature almost linear ohmic p-GaN contacts, a near-unity ideality factor, a high electron mobility cm 2 V −1 s −1 , low m cm 2 and a large breakdown voltage V.