The gallium nitride (GaN) films have been successfully fabricated on silicon (111) substrates through ammoniating Ga 2 O 3 films deposited by electrophoresis. The structure and composition of the formed films were characterized by Fourier transform infrared (FTIR) transmission spectroscopy, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results indicate that the films formed in this study are polycrystalline GaN with hexagonal wurtzite structure.
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Li et al. (2002) studied this question.
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