An electron-mirror infrared image converter using a 4-μ-thick layer of 95 at. % of Se and 5 at. % of Bi as both mirror and target has been constructed. Preliminary measurements indicate that the device has a sensitivity of 0.13 μA per μW per cm2 at a wavelength of 9600 Å.
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Bates et al. (1969) studied this question.
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