Simulation of High-Concentration Phosphorus Diffusion in Silicon Taking into Account Phosphorus Clustering and Pile-Up

We have simulated the transient enhanced diffusion (TED) of high-concentration phosphorus (P) in silicon during post-implantation annealing. Based on the models for P diffusion, for TED by self-interstitial clusters, and for end-of-range (EOR) dislocations as both a sink for and source of self-interstitials, a unified simulation is done, taking into account P clustering and P pile-up. P clustering is taken into account only beneath EOR dislocations, and P pile-up is estimated by a diffusion-segregation term in the diffusion equations. We have satisfactorily fitted P depth profiles at high doses (∼1015 cm-2) in a wide range of annealing conditions (700–1000°C).